| PART |
Description |
Maker |
| 2SC5384 2SC5384-10 |
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corpora...
|
| QVS212CG010CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R5BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG020CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R8CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R5CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| 2SC1781H 2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING
|
Hitachi Semiconductor
|
| HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NE678M04-T2-A |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| 2SC5945 2SC5945TR-E |
Si NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| RM50DA-XXS RM50CA-XXS RM50C1A-XXS RM50 |
MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率，高频率使用的绝缘
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC5347 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications 高频半功率输出级，低噪声输出放大器中的应
High-Frequency Semi-Power Output Stage/ Low-Noise Medium Output Amplifiers Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
