| PART |
Description |
Maker |
| TD62084AFN |
High voltage , Hight current Darlinton Driver(高电压，高电流达林顿驱动
|
Toshiba Corporation
|
| 2SC3906K |
High breakdown voltage.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| R2M |
OVER VOLTAGE PROTACTION DIODE BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A
|
SSE[Shanghai Sunrise Electronics]
Shanghai Sunrise Electronics Co., LTD.
|
| 1.5KE20 1N6299A 1N6296 1.5KE27 1N6287A 1N6302A 1.5 |
Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 550V
|
GOOD-ARK Electronics
|
| P6KE20 P6KE24 P6KE6.8C P6KE8.2C P6KE9.1C P6KE8.2CA |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
|
Shanghai Sunrise Electronics
Microsemi
|
| 1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W
|
Shanghai Sunrise Electronics
|
| 2SA1179 |
High breakdown voltage Collector-base voltage VCBO -55 V
|
TY Semiconductor Co., Ltd
|
| LM4040CIX3-5.0 LM4040DIX3-2.1 LM4040AIX3-3.0 LM404 |
Analog IC
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.048 V, PDSO3
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 4.096 V, PDSO3
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PDSO3
|
Maxim Integrated Products, Inc.
|
| RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS RD18JS R |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode
8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
surface mount silicon Zener diodes 表面贴装硅稳压二极管
DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode
DO-34 Package Low noise Sharp Breakdown characteristics 400 mW Zener Diode
Constant Voltage diode 400mW DO-34
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MMSTA92 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| SMTPA100 SMTPA130 SMTPA120 SMTPA180 SMTPA200 SMTPA |
TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V
|
Galaxy Semi-Conductor Holdings Limited
|
| 2SD814 2SD814A 2SD0814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
