PART |
Description |
Maker |
SI1032X-T1-E3 |
Trans MOSFET N-CH 20V 0.2A 3-Pin SC-89 T/R
|
Vishay Siliconix
|
MTM15N40 |
Trans MOSFET P-CH 20V 2.1A 5-Pin Mini5-G1
|
New Jersey Semiconductor
|
MTM15N20 |
Trans MOSFET P-CH 20V 2.1A 5-Pin Mini5-G1
|
New Jersey Semiconductor
|
SI8441DB-T2-E1 |
Trans MOSFET P-CH 20V 4.8A 6-Pin Micro Foot T/R
|
Vishay Siliconix
|
FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟 Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管) N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
ITF87072DK8T FN4812 |
6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω双组 P沟道2.5V专用功率MOS场效应管) From old datasheet system 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
|
Intersil Corporation
|
IRL5NJ7404 2281 |
-20V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package HEXFET? POWER MOSFET From old datasheet system HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL
|
IRF[International Rectifier]
|
FDC638APZ |
-20V P-Channel 2.5V PowerTrenchSpecified MOSFET P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
SIR414DP-T1-GE3 |
Trans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R N-Channel 40-V (D-S) MOSFET
|
Vishay Siliconix
|
IR432DP-T1-GE3 SIR432DP |
Trans MOSFET N-CH 100V 8.6A 8-Pin PowerPAK SO T/R N-Channel 100-V (D-S) MOSFET
|
Vishay Siliconix
|