| PART |
Description |
Maker |
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| SI2325DS |
TrenchFET Power MOSFET Ultra Low On-Resistance Small Size
|
TY Semiconductor Co., Ltd
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SI3460DV |
TrenchFET Power MOSFET
|
TY Semiconductor Co., Ltd
|
| SQ2348ES |
TrenchFET Power MOSFET
|
TY Semiconductor Co., Ltd
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IXFH75N10Q IXFT75N10Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPER FET POWER MOSFETS Q CLASS
|
IXYS[IXYS Corporation]
ETC
|
| IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFH26N60Q IXFT26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
