PART |
Description |
Maker |
BD202 BD204 |
(BD202 / BD204) SILCON EPITAXIAL-BASE POWER TRANSITORS
|
Comset Semiconductors
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
FZT692B |
NPN Silcon Planar Medium Power High Gain Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
BDX14A BDX14AA BDX14 |
PNP SILICON TRANSISTOR, EPITAXIAL BASE 进步党硅晶体管,外延基地 PNP SILICON TRANSISTOR/ EPITAXIAL BASE
|
Seme LAB TT electronics Semelab, Ltd.
|
BZX84C16CC |
SILCON PLANAR ZENER DIODES
|
Diode Semiconductor Kor...
|
2N3713-12 |
EPITAXIAL-BASE TRANSISTORS
|
Comset Semiconductor
|
BDX67 BDX67A BDX67B BDX67C |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 16 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
2N4901 2N4902 2N4903 |
PNP SILICON TRANSISTORS, EPITAXIAL BASE
|
Comset Semiconductor
|
2N6106 2N6291 |
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corporation
|
2SA814 2SA815 |
SILICON PNP EPITAXIAL BASE MESA TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
BD201 BD202 BD204 BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
|
GE Security, Inc. GE[General Semiconductor]
|
HI667A HI649A |
Emitter to base voltage:5V 1A PNP epitaxial planar transistor
|
Hi-Sincerity Microelectronics
|