| PART |
Description |
Maker |
| BAV21 |
BAV21 SIGNAL DIODE
|
WILLAS ELECTRONIC CORP
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| JAN1N3612 JANTX1N3957 |
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, Signal Diode
|
Vishay Semiconductors
|
| UF4003 UF4005-E3 |
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| 1N457 1N457AT50R 1N457T50R 1N457ATR 1N457TR |
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Bulk 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N581707 1N5819-E3/54 1N5819-E3/73 1N5819-E3_54 1N |
DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
Schottky Barrier Rectifiers
|
Vishay Semiconductors
Vishay Siliconix
|
| BAW74 BAW74D87Z |
High Conductance Fast Diode
Small Signal Diode 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MCL103B-GS08 |
DIODE SILICON, SIGNAL DIODE, ROHS COMPLIANT, GLASS, MICROMELF-2, Signal Diode
|
Vishay Semiconductors
|
| JANTX1N4153-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.15; IFSM (A): 2; Cj (pF): 2; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.81; IR (µA): 0.05; 0.15 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
|
