| PART |
Description |
Maker |
| CM600DU-12NFH |
Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| QIS0660004 |
Single IGBTMOD NX-Series Module 600 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CS220-35N CS220-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 600 THRU 800 VOLTS 35 A, 600 V, SCR, TO-220AB
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| FCD600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m
|
Fairchild Semiconductor
|
| DO-214AA SMB/DO-214AA SMBJ58CA |
600 Watt Transient Voltage Suppressors 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressors 600瓦瞬态电压抑制器
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| SPD5420TXV SPD5415 SPD5415S SPD5415SMS SPD5415SMSS |
3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| NDL5531P NDL5531P1C NDL5531P1D NDL5531P2C NDL5531P |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信30毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| MCP6141-I/P MCP6143T-E/CH MCP6141T-E/OT |
600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps 600 nA的，非统一增益轨到轨输输出运算放大
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| SDR4006HFPTXV SDR4004HFNS SDR4004HFNTX SDR4004HFNT |
40 A, 600 V, SILICON, RECTIFIER DIODE
40A 35nsec 400 to 600 V Hyper Fast Rectifier
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
