| PART |
Description |
Maker |
| KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16）的CMOS掩模ROM分位512Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HT27C040 |
CMOS 512Kx8-Bit OTP EPROM
|
holtek
|
| MX29F400BT MX29F400BTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MXIC
|
| AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system
EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC
4 Mbit (512 K x 8-Bit)
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| MX29F400CBMI-70G MX29F400CBTI-70G |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| MX26LV400TXBC-55G MX26LV400BXBC-70G MX26LV400TXBC- |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
http://
|
| KM684000C KM684000CL KM684000CLG-5 KM684000CLG-5L |
Quadruple Bilateral Analog Switch 14-TVSOP -40 to 85
Quadruple Bilateral Analog Switch 14-SOIC -40 to 85
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
Quadruple Bilateral Analog Switch 14-PDIP -40 to 85 512Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| EM39LV040-90FDI EM39LV040-55FDI EM39LV040-45RFDI E |
39514262
4M (512Kx8) Bits Flash Memory 4分（512Kx8）位快闪记忆
|
ELAN Microelctronics Corp .
Elan Microelectronics, Corp.
|
