| PART |
Description |
Maker |
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BYM05-100 BYM05-600 BYM05-400 |
0.5 A, 100 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
0.5 A, 400 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc.
Vishay Beyschlag
|
| BYW27-400GP BYW27-100GP BYW27-600GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
TOKO, Inc.
Vishay Beyschlag
|
| PRS07 PRS07J PRS07D PRS07G PRS07G115 PRS07J115 PRS |
0.6 A, 200 V, SILICON, SIGNAL DIODE
0.6 A, 600 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
0.6 A, 400 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
Fast soft-recovery rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MRA4005T3 |
1 A, 600 V, SILICON, SIGNAL DIODE
|
MOTOROLA INC
|
| RU2 |
1 A, 600 V, SILICON, SIGNAL DIODE
|
SANKEN ELECTRIC CO LTD
|
| 1N6661 1N6663 JAN1N6663 JANTXV1N6663 JANTX1N6663 1 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
| GPP10J-E3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
|
VISHAY SEMICONDUCTORS
|
| ER1J-GT3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| 1N4934G IN4937 1N4933G 1N4935G 1N4936G 1N4937G |
FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON[Rectron Semiconductor]
|
| GL34A08 GL34J-TP |
0.5 Amp Standard Recovery Rectifier 50 to 1000 Volts
0.5 A, 600 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components
|
|
