PART |
Description |
Maker |
MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET 16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET 2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET 19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET 7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc. Intersil, Corp. VISHAY INTERTECHNOLOGY INC
|
PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400; POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
|
NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Marktech Optoelectronics Ecliptek, Corp. Daishinku, Corp. Electronic Theatre Controls, Inc. 飞思卡尔半导体(中国)有限公司 Pulse Engineering, Inc. HIROSE ELECTRIC Co., Ltd.
|
FRM244D FN3230 FRM244R FRM244H |
12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs 12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
FRK460D FRK460H FRK460R FN3238 |
17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
SIHF740STRL-GE3 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
SIHF730A-E3 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
FDP13N40 |
13 A, 400 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
IRFF230 |
5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
2N6786TX |
1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
HARRIS SEMICONDUCTOR
|
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