| PART |
Description |
Maker |
| IXGN60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS[IXYS Corporation]
|
| PBSS5250T |
PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.
|
NXP Semiconductors N.V.
|
| PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| IXGH31N60U1 |
Ultra-Low VCE(sat) IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGN400N30A3 |
Ultra-Low-Vsat PT IGBT for up to 10kHz Switching
|
IXYS Corporation
|
| IXSM45N100 IXSH45N100 |
1000V IGBT with diode
IGBT Discretes: Low Saturation Voltage Types
Low VCE(sat) IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| PBSS5520X PBSS5520X-15 |
20 V, 5 A PNP low VCEsat (BISS) transistor 20伏，5安PNP型低饱和压降BISS）晶体管
20 V, 5 A PNP low VCEsat (BISS) transistor
PNP low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| IRG7PH35UD1-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| IRG7PH28UD1PBF |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| PBSS4140U |
40V Low VCEsat NPN Transistor
40 V low VCEsat NPN transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| SGS6N60UFD SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
