| PART |
Description |
Maker |
| ZC831 ZC831A ZC831B ZC830 ZC830A ZC830B ZC836B ZC8 |
SOT23 SILICON VARIABLE CAPACITANCE DIODES
25 Volt hyperabrupt varactor diode
MS (MIL-C-5015)/97 SERIES 3108A SOLID SHELL ANGLE PLUGS, RIGHT ANGLE BODY STYLE, SOLDER TERMINATION, 22 SHELL SIZE, 22-2 INSERT ARRANGEMENT, PLUG GENDER, 3 CONTACTS 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
DIODES INC
|
| SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
|
Coilcraft, Inc.
|
| BB731S BB731 |
From old datasheet system
Silicon epitaxial planar capacitance diodes with very wide effective capacitance variation for tuning the VHF range 41 ... 170 MHz in hyperband televi
DIODE VHF BAND, 50 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-2, Variable Capacitance Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Semiconductors
|
| MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
High Q Hyperabrupt Tuning Varactors
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| 1N4795A 1N4811A 1N4811B 1N4815 1N4797B |
39 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
56 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| MA4X348 |
Silicon planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2B345 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| HVD400C |
2.145 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
|
