| PART |
Description |
Maker |
| GS81302R08E-200I GS81302R09E-200IT GS81302R09E-167 |
16M X 8 DDR SRAM, 0.45 ns, PBGA165
4M X 9 DDR SRAM, 0.45 ns, PBGA165
16M X 9 DDR SRAM, 0.5 ns, PBGA165
4M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI TECHNOLOGY
|
| HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
64M X 4 DDR DRAM, 0.45 ns, PBGA60
|
Qimonda AG
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| CY7C1529JV18-250BZXC CY7C1529JV18-250BZXI CY7C1529 |
8M X 9 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1318CV18-200BZXC |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| K4X51323PC-7EC30 K4X51323PC-8EC30 |
16M X 32 DDR DRAM, 6 ns, PBGA90 FBGA-90
16M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
|
Applied Micro Circuits, Corp.
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1528V18-167BZC CY7C1528V18-167BZI CY7C1528V18- |
8M X 9 DDR SRAM, 0.5 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
8M X 9 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| DS1270Y |
16M Nonvolatile SRAM(16M非易失性静态RAM) 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
Maxim Integrated Products, Inc.
|
| LRS1329 |
Stacked Chip 16M Flash and 2M SRAM 1,600闪存芯片堆叠以及2M SRAM
|
Sharp, Corp.
|
