| PART |
Description |
Maker |
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| IRF9620 FN2283 |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| 2SK2874-01L 2SK2874-01S 2SK2874 |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| APT20F50B APT20F50S |
N-Channel FREDFET
20 A, 500 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| IXTN36N50 |
N-Channel Enhancement Mode 36 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS Corporation
|
| 2SK1937-01 |
SWITCHING DIODE, 85V, SM SOT23 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| 2SK769 |
10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PANASONIC CORP
|
| IRFPS43N50K |
47 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
|
