PART |
Description |
Maker |
JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56 4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory 32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES 64M X 8 FLASH 3V PROM, 12000 ns, PDSO48 128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics NUMONYX
|
AT49SV322DT-80TU AT49SV322D-80TU |
FLASH 32M,1.8V, TOP BOOT,TSOP, GREEN PKG(FLASH) 2M X 16 FLASH 1.8V PROM, 80 ns, PDSO48 fLASH 32M,1.8V, BTM BOOT,TSOP, GREEN PKG(FLASH) 2M X 16 FLASH 1.8V PROM, 80 ns, PDSO48
|
Atmel, Corp.
|
MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 32M (2M x 16) BIT Page Dual Operation 32M的(2米16)位页双操作 NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited. Fujitsu, Ltd. FUJITSU LTD
|
MBM29F033C-90 MBM29F033C-90PTN MBM29F033C-70PTR MB |
32M (4M X 8) BIT 4M X 8 FLASH 5V PROM, 120 ns, PDSO40
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
AT45DB321D-TU AT45DB321D-CNU AT45DB321D-MU AT45DB3 |
32-megabit 2.7-volt DataFlash 32M X 1 FLASH 2.7V PROM, DSO8
|
Atmel Corp. Atmel, Corp.
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
AT45DB321C-CC AT45DB321C-RI AT45DB321C-CI AT45DB32 |
32 MEGABIT 2.7 VOLT DATAFLASH TRANSI, NPN, 160V, 600MA, 2W, SOT223, CZT5551 DIODE/SM,REC*1A*60V 32M X 1 FLASH 2.7V PROM, PDSO28
|
Atmel Corp. Atmel, Corp.
|
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