| PART |
Description |
Maker |
| MT29F4G08ABADAH4 MT29F4G16ABBDAH4 MT29F8G08ADADAH4 |
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
|
Micron Technology
|
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| TS4GGMP860 TS8GGMP860 |
4GB/8GB USB Flash Drive
|
Transcend Information. Inc.
|
| KVR800D2D4P6K2-8G |
8GB (4GB 512M x 72-Bit x 2 pcs.) DDR2-800
|
List of Unclassifed Man...
|
| KVR667D2D4F5K2-16G |
16GB (8GB 1024M x 72-Bit x 2 pcs.) PC2-5300
|
List of Unclassifed Man...
|
| KVR667D2D4F5K2-8G |
8GB (4GB 512M x 72-Bit X 2 pcs.) PC2-5300
|
List of Unclassifed Man...
|
| K9K8G08U1E |
4Gb E-die NAND Flash
|
Samsung
|
| K524G2GACB-A050 |
4Gb NAND Flash 2Gb Mobile DDR
|
Samsung semiconductor
|
| NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX
STMICROELECTRONICS[STMicroelectronics]
|
| S30MS01GP25TAW002 S30MS512P25TAW012 S30MS512P25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology
|
SPANSION[SPANSION]
|
