| PART |
Description |
Maker |
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| CMUDW6001 |
SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODE
75V, 250mA Ultra Low Leakage Switching Diode in the SOT-523W package
|
Central Semiconductor Corp
|
| 1SS196 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS387 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS201 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS200 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS360 E000284 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| CMAD444810 CMAD4448-15 |
SURFACE MOUNT ULTRA HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
Central Semiconductor C...
|
| 1SS336 E000277 |
From old datasheet system
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| XP151A11B0MR |
Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V
|
TY Semiconductor Co., Ltd
|
