PART |
Description |
Maker |
FQU1N60C FQD1N60C FQD1N60CTF FQD1N60CTM FQU1N60CTU |
600V N-Channel Advance QFET C-Series 600V N-Channel MOSFET From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
FQPF11N40C FQP11N40C |
400V N-Channel Advance QFET C-series 400V N-Channel Advanced QFET C-series
|
Fairchild Semiconductor
|
FQI6N60C FQB6N60C FQB6N60CTM |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI8N60C FQB8N60C FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI10N60C FQB10N60C FQB10N60CTM FQI10N60CTU |
600V N-Channel MOSFET 600V N-Channel Advance Q-FET C-Series
|
http:// FAIRCHILD[Fairchild Semiconductor]
|
FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5 N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W 600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
SSW2N60B 2N60B SSI2N60B SSW2N60BTM |
600V N-Channel B-FET / Substitute of SSW2N60A 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQD5N20LTF |
200V N-Channel Logic Level QFET 3.8 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
STGB7NB60KD STGD7NB60K STGP7NB60K STGP7NB60KDFP ST |
N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH?/a> IGBT N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT (STGD7NB60K / STGP7NB60K / STGB7NB60KD) N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH IGBT N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESHIGBT N沟道A - 600V IGBT的TO-220/FP/DPAK/D2PAK PowerMESH
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
FQT5P10 FQT5P10TF |
250V N-Channel MOSFET 100V P-Channel QFET
|
Fairchild Semiconductor
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|