PART |
Description |
Maker |
MGF0919A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0805A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics Eudyna Devices Inc Fujitsu Media Devices Limited Fujitsu Component Limited.
|
FLL810IQ-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FLL810IQ-3C |
L-BAND HIGH POWER GAAS FET
|
Eudyna Devices Inc
|