PART |
Description |
Maker |
BSM25GAL100D BSM25GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 25A I(C) TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
|
|
FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 75A条一(c Molding Type Module
|
Sharp, Corp. FAIRCHILD[Fairchild Semiconductor]
|
MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system
|
Toshiba Semiconductor
|
PS21865 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,20A I(C)
|
Mitsubishi Electric & Electronics USA
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IRGRDN400M12 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Diodes, Inc.
|
F6-8R10KF |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 1KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块|全桥| 1KV交五(巴西)国际消费电子展| 8A条一(c
|
ECM Electronics, Ltd.
|
IRGRDN400K06 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 520A I(C) 晶体管| IGBT功率模块|独立| 600V的五(巴西)国际消费电子展| 520A一(c
|
Diodes, Inc.
|
CM600E2Y34H |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 600A I(C) 晶体管| IGBT功率模块|独立| 1.7KV五(巴西)国际消费电子展| 601余(丙)
|
Powerex, Inc.
|
VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一(c
|
Aimtec
|