PART |
Description |
Maker |
CY62136ESL-45ZSXIT |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62136EV30LL-45BVXI CY62136EV30LL-45BVXIT CY62136 |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62128ELL-45SXI CY62128ELL-45ZAXI CY62128ELL-45SX |
1-Mbit (128 K x 8) Static RAM 1-Mbit (128 K × 8) Static RAM
|
Cypress Semiconductor
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
CY62137EV30 CY62137EV30-45LL CY62137EV30LL-45BVXI |
2-Mbit (128 K x 16) Static RAM Automatic power-down when deselected
|
Cypress Semiconductor
|
CY7C1019CV33-10ZXAT |
1-Mbit (128 K × 8) Static RAM Center Power/Ground Pinout
|
Cypress Semiconductor
|
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM MoBL® 32-Mbit (2M x 16) Static RAM MoBL® 16-Mbit (1M x 16) Static RAM "SHIELDING BAG 16 X 18"" Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”,“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
MC14562B MC14562BCL MC14562BD ON0934 MC14562BCP |
128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, CDIP14 128-Bit Static Shift Register 128位静态移位寄存器 128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, PDIP14 ORDERING INFORMATION From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|