PART |
Description |
Maker |
CY7C2268XV18-600BZXC CY7C2268XV18-633BZXC |
36-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
CY7C2568XV18-600BZXC CY7C2570XV18-600BZXC CY7C2568 |
72-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress Semiconductor
|
CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构(2字突发结18 -兆位的DDR - II SRAM的) 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1263XV18 CY7C1265XV18-633BZXC CY7C1263XV18-600 |
36-Mbit QDR? II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1264XV18-366BZXC CY7C1264XV18-450BZXC |
36-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
CY7C1423AV18-250BZC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Analog Integrations, Corp.
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1992BV18-167BZXC CY7C1992BV18-300BZC CY7C1992B |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.5 ns, PBGA165 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1416AV18-167BZXI CY7C1416AV18-167BZC CY7C1416A |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.5 ns, PBGA165 36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1423BV18-200BZI CY7C1423BV18-300BZI CY7C1429BV |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.5 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|