| PART |
Description |
Maker |
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SIGC12T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC81T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SGD02N120 SGP02N120 SGB02N120 SGI02N120 |
Fast S-IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SKB10N60A07 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKW07N12008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
