| PART |
Description |
Maker |
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| BUZ50B-TO220MR1 BUZ50A-220TM BUZ50A-TO220M BUZ50A- |
6 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
7.5 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
45 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
TT electronics Semelab, Ltd.
SEMELAB LTD
|
| BSM191/F |
28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| IXTD2N100-3T |
1000 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| APT10023JLL |
36 A, 1000 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Microsemi, Corp.
|
| STW13NK100Z |
13 A, 1000 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
STMICROELECTRONICS
|
| APT1001R6SLL |
8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-2
|
Microsemi, Corp.
|
| SFF10N100P SFF10N100N |
10 AMP 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| IXFR12N100Q IXFR10N100Q |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 10 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SML100J19 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 19 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| BUZ50C-E3045 BUZ50C-E3044 BUZ50C-E3046 |
2.3 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220AB, 3 PIN
2.3 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
2.3 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
|
Infineon Technologies AG
SIEMENS AG
|
|
