| PART |
Description |
Maker |
| NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD
Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| FME-220A |
Schottky Barrier Diode - 90V/100V
100V, 20A Schottky barrier diode in TO220F package
100V/ 20A Schottky barrier diode in TO220F package
100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| BAT54J |
Schottky barrier single diode
|
NXP[NXP Semiconductors]
|
| BAT46WH |
Single Schottky barrier diode
|
NXP Semiconductors
|
| SD101CW-7-F SD101AW-7-F SD101BW-7-F |
DIODE SCHOTTKY SINGLE 30V 400mW 0.39V-vf 15mA-IFM 1mA-IF 0.2uA-IR SOD-123 3K/REEL 0.015 A, 40 V, SILICON, SIGNAL DIODE
DIODE SCHOTTKY SINGLE 50V 400mW 0.41V-vf 15mA-IFM 1mA-IF 0.2uA-IR SOD-123 3K/REEL 0.015 A, 60 V, SILICON, SIGNAL DIODE
SCHOTTKY BARRIER SWITCHING DIODE
|
Diodes, Inc.
Diodes Incorporated
|
| KDR331 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR505S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| SBT10100 SBT1020 SBT102010 SBT1030 SBT1040 SBT1045 |
Schottky Barrier Rectifier Diodes - Single Diode
|
Diotec Semiconductor
|
| SBJ1820 SBJ1830 SBJ1845 SBJ1840 |
Schottky Barrier Rectifier Diodes - Single Diode
|
Diotec Semiconductor
|
| SBJ2620 SBJ2630 SBJ2640 SBJ2645 |
Schottky Barrier Rectifier Diodes - Single Diode
|
Diotec Semiconductor
|
