| PART |
Description |
Maker |
| K7N801845B K7N803645B DSK7N803645B K7N803649B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7N803645A K7N801845A |
256Kx36-Bit Pipelined NtRAMData Sheet
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7B803625B DSK7B803625B DS_K7B803625B K7B801825B K |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7P803611B K7P803611B-HC33 K7P803611B-HC30 K7P8018 |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| K7N321801M K7N323601M DSK7N323601M |
1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM718V987 KM736V887 |
256KX36 & 512KX18 SYNCHRONOUS SRAM
|
Samsung Electronic
Samsung semiconductor
|
| DSK7A803600B K7A803600B K7A801800B DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7A803600B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
