| PART |
Description |
Maker |
| HTM4A60S |
INSULATED TYPE SENSITIVE GATE TRIAC (TO-126ML PACKAGE)
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SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
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| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MCR100-6RLRA MCR100-6RLRM MCR100-6RLRMG MCR100-6RL |
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 400 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 600 V, SCR, TO-92
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ONSEMI[ON Semiconductor]
|
| STK14C68-C25 STK14C68-5S30 STK14C68-5S25 STK14C68- |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
NVRAM (EEPROM Based)
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):70A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| RM20TPM-H02 RM20TPM-H RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MAC99706 MAC997B8RLRP MAC997 MAC997A6 MAC997A6RL1 |
400 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
Sensitive Gate Triacs; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
Sensitive Gate Triacs; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
Sensitive Gate Triacs; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ONSEMI[ON Semiconductor]
|
| PS11011 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
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