| PART |
Description |
Maker |
| DR65-0001 DR65-0001TR |
Quad Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| MADR-009190-000100 |
Quad Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
|
| DR65-0008-TR |
Quad Positive Voltage Driver for GaAs FET Switches and Attenuators 四为GaAs场效应管开关和衰减正电压驱
|
TE Connectivity, Ltd.
Citizen Finetech Miyota
Tyco Electronics
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
| IS9-1715ARH/PROTO 5962F0052101VXC 5962F0052101QXC |
Complementary Switch FET Driver, Rad-Hard
Radiation Hardened Complementary Switch FET Driver 3 A BUF OR INV BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
