| PART |
Description |
Maker |
| CGY1049 |
1 GHz, 29 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| CGY1032 |
1 GHz, 32 dB gain GaAs push-pull amplifier 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| S8740240P |
GaAs Push Pull Hybrid 40 - 870MHz 23.5dB min. Gain @ 870MHz 255mA max. @ 24VDC
GaAs Push Pull Hybrid 40 - 870MHz / 23.5dB min. Gain @ 870MHz / 255mA max. @ 24VDC
|
List of Unclassifed Manufacturers
PREMIER DEVICES, INC.
ETC[ETC]
N.A.
|
| MC-7831-HA07 |
NECs 1 GHz GaAs CATV 18 dB PUSH-PULL AMPLIFIER
NECs 1 GHz GaAs CATV 18 dB PUSH-PULL AMPLIFIER
|
California Eastern Labs
California Eastern Laboratories
|
| TGA3504-SM TGA3504-SM-15 |
2 to 30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| S10040220P |
GaAs Push Pull Hybrid 40 - 1000MHz 22dB min. Gain @ 1000MHz 270mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| CGD1042L |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| CGD985LC |
1 GHz, 25 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| HMC625LP5 HMC625LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
