| PART |
Description |
Maker |
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Search -----> AT-41435
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F659 BFQ29 BFQ29P |
From old datasheet system
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AA035N1-00 AA035N2-00 |
286 GHz GaAs MMIC Low Noise Amplifier
28-36 GHz GaAs MMIC Low Noise Amplifier
GT 12C 6#12 6#12 PIN PLUG
|
http://
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| TMT-4-0503 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
