PART |
Description |
Maker |
HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM) 128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8)同步DRAM28M的(4 × 4分列位8)同步动态RAM)的
|
SIEMENS AG
|
UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行,LVTTL 128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
M2V28S20ATP-6L M2V28S30ATP-6L M2V28S40ATP-6L M2V28 |
128M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20A |
128M Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Semiconductor
|
UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9J |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
P2S28D30CTP P2S28D40CTP |
(P2S28D30CTP / P2S28D40CTP) 128M Double Data Rate Synchronous DRAM
|
MIRA
|
EBS11RC4ACNA-7A EBS11RC4ACNA EBS11RC4ACNA-75 |
1 GB Registered SDRAM DIMM 128M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
http:// ELPIDA[Elpida Memory] Elpida Memory, Inc. DRAM
|
UPD45128163G5-A75LI-9JF-E UPD45128163-I-E UPD45128 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
EDS1232AASE-75-E EDS1232AASE-75L-E EDS1232AASE-60L |
ER 2C 2#8 SKT RECP LINE Circular Connector; No. of Contacts:6; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:20-17 RoHS Compliant: No ER 6C 3#16 3#8 SKT RECP 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 128M bits SDRAM (4M words x 32 bits) 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|