| PART |
Description |
Maker |
| CY7C1648KV18-400BZXC CY7C1648KV1812 |
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1668KV18-450BZXC CY7C1668KV18-550BZXC |
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| R1QEA4418RBG-20IA0 R1QEA4436RBG-20IB0 R1QEA4436RBG |
144-Mbit DDR?II SRAM 2-word Burst Architecture ( 2.5 Cycle Read latency ) with ODT
|
Renesas Electronics Corporation
|
| R1Q4A4436RBG-33IB0 |
144-Mbit DDR II SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| CY7C1529JV18-250BZXC CY7C1529JV18-250BZXI CY7C1529 |
8M X 9 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZ |
4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1523AV18-200BZI CY7C1523AV18-300BZI CY7C1524AV |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18204BP-30 |
36 MBit DDR II SRAM 4 Word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1645KV18 CY7C1643KV18-450BZI CY7C1643KV18-400B |
144-Mbit QDR? II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
