PART |
Description |
Maker |
MGF0952P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0919A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0910A MGF0910A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & HEMT Chips
|
Eudyna Devices Inc Fujitsu Media Devices Limited
|
MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
MSC8004 |
HIGH POWER GaAs FET Transistor
|
ASI Advanced Semiconductor
|
FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics Eudyna Devices Inc Fujitsu Media Devices Limited Fujitsu Component Limited.
|
FLL810IQ-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|