| PART |
Description |
Maker |
| UFH60GA60P |
Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A
|
Vishay Siliconix
|
| GA200SA60S |
600V DC-1 kHz (Standard) Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| UFB200FA40 |
Insulated Ultrafast Rectifier Module 绝缘超快整流模块
400V 200A Ultrafast Doubler Diode in a SOT-227 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| F1B2CDI |
10.0 Ampere Insulated Dual Tandem Polarity Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| GB70NA60UF13 |
High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
|
Vishay Siliconix
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| STTH12T06 STTH12T06DI |
600 V tandem extra fast diode
|
ST Microelectronics
STMicroelectronics
|
| STTH806DTI05 STTH806DTI |
Tandem 600V HYPERFAST BOOST DIODE
|
STMICROELECTRONICS[STMicroelectronics]
|
| STTH506DTI |
Tandem 600V HYPERFAST BOOST DIODE
|
STMICROELECTRONICS[STMicroelectronics]
|
| STTH8ST06 STTH8ST06DI |
600 V Tandem extra fast diode
|
ST Microelectronics
|
| STTH8T06 STTH8T06DI |
600 V tandem extra fast diode
|
ST Microelectronics
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
