| PART |
Description |
Maker |
| W24257AJ-8N W24L257AJ-8A |
32K X 8 High Speed CMOS Static RAM 32K X 8 STANDARD SRAM, 8 ns, PDSO28
32K×8 High-Speed CMOS Static RAM(32K×8位高速CMOS静态RAM)
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| AT27LV256A AT27LV256A-12 AT27LV256A-12JC AT27LV256 |
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 Low Voltage OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-TSSOP -55 to 125 32K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic CMOS Programmable Divide-by-N Counter 24-SOIC -55 to 125 32K X 8 OTPROM, 120 ns, PDSO28
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IDT707288S_L 707288_DS_26036 IDT707288S15PF IDT707 |
64K x 16 Asynchronous Bank-Switchable Dual-Port SRAM
From old datasheet system
HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
|
IDT[Integrated Device Technology]
|
| W24257A-15 W24257AK-15 W24257AJ-15 W24257AS-12 W24 |
32K X 8 High Speed CMOS Static RAM
32K X 8 High Speed CMOS Static RAM 32K X 8 STANDARD SRAM, 35 ns, PDIP28
ER 7C 5#16 2#12 PIN RECP WALL
ER 4C 3#12 1#8 PIN RECP
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K X 8 STANDARD SRAM, 120 ns, PDSO28
32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| 70V7519S133BF 70V7519S133BC 70V7519S133BCI 70V7519 |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Technology
|
| IDT70V7399S133DDI |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Techn...
|
| IDT70V7339S IDT70V7339S133BC IDT70V7339S133BCI IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| IDT70V7399S IDT70V7399S133BC IDT70V7399S133BCI IDT |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
