| PART |
Description |
Maker |
| IRG4PH50K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier
|
| IRGP8B120KD-E |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| IRG4PH40UD-E |
Leaded 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| IRGP20B120U-E |
1200V UltraFast 5-40 kHz Single IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 20MT120UF 20MT120UFPBF |
40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package
|
Vishay Semiconductors
IRF[International Rectifier]
|
| RURD4120S RURD4120 UR4120 RURD4120S9A |
4A, 1200V UltraFast Diode; ; No of Pins: 2; Container: Tape & Reel 4 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252
4A, 1200V Ultrafast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K |
600V UltraFast 10-30 kHz IGBT in a TO-262 package
600V UltraFast 10-30 kHz IGBT in a D2-Pak package
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
| RURD4120S RURD4120 FN3641 |
4A/ 1200V Ultrafast Diodes
4A, 1200V Ultrafast Diodes
From old datasheet system
|
Intersil Corporation
|
| 40MT120UH 40MT120UHT |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
|
IRF[International Rectifier]
|
| IRGB6B60K IRGS6B60K IRGSL6B60K |
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
600V UltraFast 10-30 kHz IGBT in a D2-Pak package
600V UltraFast 10-30 kHz IGBT in a TO-262 package
|
International Rectifier
|
