PART |
Description |
Maker |
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率,高频率,按包装类
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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CHT5338ZPT |
NPN Silicon Transisto r
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Chenmko Enterprise Co. Ltd.
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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IRFBL3703 |
Synchronous Rectification in High Power High Frequency DC/DC Converters HEXFET? Power MOSFET
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IRF[International Rectifier]
|
ST49C101A ST49C101ACF8-01 ST49C101ACF8-03 ST49C101 |
High Frequency Clock Multiplier 80 MHz, OTHER CLOCK GENERATOR, PDSO8 High Frequency Clock Multiplier(高频时钟乘法器(掩摸可编程单片模拟锁相环设备 Preprogrammed High Speed Frequency Multiplier
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Exar, Corp. EXAR[Exar Corporation]
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
FD3000AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率,高频率新闻袋
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Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
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FD1000FX-90 |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 A |
0.3-25V; high frequency switch mode Li-Ion battery charger. For portable computers, fast chargers Analog IC High-Frequency Switch Mode Li-Ion Battery Charger 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO24
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AD[Analog Devices] ANALOG DEVICES INC
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FP1107R1-R07-R FP1107R2-R07-R FP1107R1-R12-R FP110 |
High Current, High Frequency, Power Inductors
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Cooper Bussmann, Inc.
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