| PART |
Description |
Maker |
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SK2503 A5800293 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 5A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SK2887 A5800304 |
Transistors > MOS FET > Power MOS FET
Switching (200V, 3A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SK2713 A5800296 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (450V, 5A)
|
ROHM
|
| 2SK3018 A5800519 |
Transistors > MOS FET > Small Signal MOS FET
From old datasheet system
Small switching (30V, 0.1A)
|
Rohm
|
| FX6ASJ-03-T13 FX6ASJ-03 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Pch Power MOS FET 高速开关使用沟道功率MOS FET
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| RSQ025P03 |
Transistors > MOS FET > TSMT3,5,6 Series
|
ROHM
|
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| PHN708 |
7 N-channel 80 mohm FET array enhancement mode MOS transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
