PART |
Description |
Maker |
FCD620N60ZF FCD620N60ZFCT-ND |
N-Channel SuperFETII FRFETMOSFET 600V, 7.3A, 620m FCD620N60Z FN-Channel SuperFET II FRFET MOSFET 600 V 7.3 A 620 mΩ
|
Fairchild Semiconductor
|
FCH041N60F |
FCH041N60F N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 mΩ
|
Fairchild Semiconductor
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
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FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFPC60LC-P IRFPC60LC-PPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247SM package TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC TO-247AC, 3 PIN
|
International Rectifier Vishay Intertechnology, Inc.
|
FCB36N60N FCB36N60NTM |
N-Channel SupreMOSMOSFET 600V, 25A, 125m N-Channel SupreMOS? MOSFET 600 V, 36 A, 90 mΩ
|
Fairchild Semiconductor
|
FCI25N60NF102 FCI25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 125m N-Channel SupreMOS? MOSFET 600 V, 25 A, 125 mΩ
|
Fairchild Semiconductor
|
FDP20N50F |
N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω N-Channel MOSFET, FRFET 500V, 20A, 0.26ヘ
|
http:// Fairchild Semiconductor
|
HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
|
Intersil, Corp. Intersil Corporation
|
IRG4BC10KD IRG4BC10KDPBF |
9 A, 600 V, N-CHANNEL IGBT, TO-220AB INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
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