| PART |
Description |
Maker |
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| SGB30UFSMS SGB10UFSMS SGB15UFSMS SGB20UFSMS SGB25U |
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SAM50FA |
0.5 AMP 5000 VOLTS 150 nsec HIGH VOLTAGE RECTIFIER
|
Solid States Devices, Inc
|
| SUM50F SUM20F SUM25F SUM30F SUM35F SUM40F |
0.5 AMPS 2000 - 5000 VOLTS 180 nsec HIGH VOLTAGE RECTIFIER
|
http://
SSDI[Solid States Devices, Inc]
|
| SHM120UF SHM140UF SHM40UF SHM60UF SHM80UF SHM100UF |
50-250 mA 1500-14000 VOLTS 60-100 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| RT9266 RT9266CE |
Tiny Package, High Efficiency, Step-up DC/DC Converter
Input Volt. Range(V) = 1~6.5 ;; Output Volt. Range(V) = Adjustable ;;
|
RICHTEK
|
| AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
ETC
|
| APT15S20BCT ABT15S20BCT APT15S20BCTG |
MOSFET
HIGH VOLTAGE SCHOTTKY DIODE
Schottky Center Tap RECTIFIER; Package: TO-247 [B]; VR (V): 200; IO (A): 15; VF (V): 0.8; trr (nsec): 20; Qrr (nC): 440;
|
Advanced Power Technology Ltd.
MICROSEMI POWER PRODUCTS GROUP
|
| IDT72V36110L7.5PF V36100L6PF |
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO 128K X 36 OTHER FIFO, 5 ns, PQFP128
3.3 VOLT HIGH-DENSITY SUPERSYNC II??36-BIT FIFO
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| AT49BV2048 |
2-Megabit 3-volt Only Flash Memory(2M浣?3V???瀛???ī
2M bit. 2.7-Volt Read and 2.7-Volt Write. Byte-Write Flash. Bottom Boot
|
Atmel Corp.
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
