| PART |
Description |
Maker |
| MRF9045MR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc
|
| MRF9045M |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc.
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| UPD65021 UPD65100 UPD65000 UPD65004 UPD65011 UPD65 |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS UPD65000（的CMOS - 3）系微米的CMOS门阵
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS
|
NEC, Corp.
NEC[NEC]
http://
|
| STD80 |
0.5 Micron STD80 Standard Cell Library Introduction
|
Samsung Electronic
|
| OV20880 OV20880-GA5A |
20-Megapixel Second-Generation 1.0-Micron PureCel?Plus-S Sensor for Smartphones
|
OmniVision Technologies...
|
| UPD966XX UPD936XX UPD946XX UPD956XX CB-C8 |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC[NEC]
|
| N25Q00AA |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q128A13ESE40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| N25Q512A13GF840E N25Q512A83GSF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A
|
Micron Technology
|
