| PART |
Description |
Maker |
| HY5Y7A2DLM HY5Y7A2DLMP-HF |
Mobile SDR - 512Mb
|
Hynix Semiconductor
|
| HYM72V64736T8 HYM72V64736LT8-H |
64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
|
| HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| W949D2CBJX6E W949D6CB W949D6CBHX5E W949D6CBHX6G W9 |
512Mb Mobile LPDDR
|
Winbond
|
| W989D6CBGX6E W989D6CBGX6I W989D6CBGX7E W989D2CBJX6 |
512Mb Mobile LPSDR
|
Winbond
|
| KBE00F005A-D411 KBE00F005A |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG[Samsung semiconductor]
|
| W987D6CKJX5G W947D6CKJX5G W989D6CKJX5G W949D6CKJX5 |
512Mb Mobile LPSDR
512Mb Mobile LPSDR
|
Winbond
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| KVR266X64SC25 KVR266X64SC25_512 KVR266X64SC25/512 |
512MB 266MHz DDR Non-ECC CL2.5 SODIMM
MEMORY MODULE SPECIFICATION 512MB 64M x 64-BIT DDR266 CL2.5 200-PIN SODIMM
|
ETC
List of Unclassifed Manufacturers
|
| HFDOM40C-256S2 HFDOM40C-032S1 HFDOM40C-032S2 HFDOM |
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HFDOM44P-016S1 HFDOM44P-032S2 HFDOM44P-032SX HFDOM |
44Pin Flash Disk Module Min.16MB~Max.512MB, True IDE Interface Mode, 3.3V/5.0V Operating 44Pin盘模块Min.16MBMax.512MB，真正的IDE接口模式3.3V/5.0V工作
44Pin Flash Disk Module Min.16MB~Max.512MB, True IDE Interface Mode, 3.3V/5.0V Operating 44Pin盘模块Min.16MBMax.512MB，真正的IDE接口模式.3V/5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
