PART |
Description |
Maker |
HR161 |
Medium Power Amplier
|
BOWEI Integrated Circuits CO.,LTD.
|
HE574 |
Medium Power Amplier
|
BOWEI Integrated Circuits CO.,LTD.
|
2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis Medium Power Transistor (32V/ 1A) Medium Power Transistor (32V, 1A) From old datasheet system Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse Rohm CO.,LTD. ROHM[Rohm]
|
STM51004A STM51004G STM51004X STM51005A STM51005G |
1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包,中功 (STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power 1300 nm Laser in Receptacle Package,Medium Power 1300 nm Laser in Receptacle Package Medium Power From old datasheet system 1300 nm Laser, Medium Power
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc. Agilent (Hewlett-Packard)
|
TGA1073A TGA1073A-SCC |
26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc. TRIQUINT[TriQuint Semiconductor]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏,1安PNP型中等功率晶体管 Si, POWER TRANSISTOR 45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use 600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
AT-42000 AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power GHz中等功率高达6 GHz的中等功
|
HIROSE ELECTRIC Co., Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 介质功率放大器应STOROBO Flash应用
|
Toshiba Corporation Toshiba, Corp.
|