| PART |
Description |
Maker |
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CFG40006S-AMP1 |
6 W, RF Power GaN HEMT, Plastic
|
Cree, Inc
|
| TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
