| PART |
Description |
Maker |
| FM21LD1611 FM21LD16-60-BGTR |
2Mbit F-RAM Memory
|
Ramtron International Corporation
Ramtron International Corpo...
|
| AT61162ENBSP AT61162E |
Radiation Hard 2Mbit x 8 SRAM Cube
From old datasheet system
|
Atmel Corp
|
| LH28F016SUHT LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory
16Mbit(1Mbit x 16/ 2Mbit x 8) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| M28W201 |
2Mbit (256Kb x8, Bulk) Low Voltage Flash memory(2Mb低压闪速存储器)
|
意法半导
|
| HMN2568D-85 HMN2568D-85I HMN2568D-120 HMN2568D-120 |
Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| M28W231 |
2Mbit (256Kb x8, Boot Block) Low Voltage Flash Memory(2Mb低压闪速存储器)
|
意法半导
|
| LH28F160BJHE-BTL70 |
16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M1Mx16/2Mx8)Boot Block 闪速存储器)
|
Sharp Corporation
|
| AM29LV200BB-90EF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 128K X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion, Inc.
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
