| PART |
Description |
Maker |
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| IS61LV25616-12T IS61LV25616-10LQ IS61LV25616-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 10 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K × 16高速异步的CMOS静态RAM.3V电源
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PBGA48
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 7 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel 256K X 16 STANDARD SRAM, 15 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel
|
INTEGRATED SILICON SOLUTION INC
Aeroflex, Inc.
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IDT71V416S15PHI |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
|
Integrated Device Techn...
|
| IDT71256L |
CMOS Static RAM 256K (32K x 8-Bit)
|
List of Unclassifed Manufacturers
|
| TC554161AFTI-85L |
256K Word x 16 Bit CMOS Static RAM(256K字x 16 CMOS 静RAM) 256K字16位CMOS静态RAM56K字16位的CMOS静态RAM）的
|
Toshiba, Corp.
|
| TC554161AFT-85V TC554161AFT-10V |
256K Word x 16 Bit CMOS Static RAM(256K字x 16 CMOS 静RAM) 256K字16位CMOS静态RAM56K字16位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| P4C1026-25J4C P4C1026-15CC P4C1026-15CI P4C1026-15 |
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PQCC28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC32
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDIP28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDIP28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDSO28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDSO28
|
Pyramid Semiconductor, Corp.
Pyramid Semiconductor Corporation
Pyramid Semiconductor C...
|
| UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
http://
|
| UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
