| PART |
Description |
Maker |
| GS71216TP |
64K x 16 1Mb Asynchronous SRAM 64K的16异步SRAM
|
GSI Technology, Inc.
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| GS71208TP-8T GS71208TP-8 |
8ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 8 ns, PDSO32 0.400 INCH, TSOP2-32
|
GSI Technology, Inc.
|
| GS71108U-12 GS71108U-12I GS71108U-10 GS71108U-10I |
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 12 ns, PBGA48
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 10 ns, PBGA48
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 15 ns, PBGA48
|
GSI Technology, Inc.
|
| N01L0818L1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NanoAmp Solutions
|
| GS71208TP-8 |
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
|
GSI Technology, Inc.
|
| N01L163WC2AT2-55I N01L163WC2A N01L163WC2AB N01L163 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 1MB的超低功耗CMOS SRAM的异
From old datasheet system
|
Electronic Theatre Controls, Inc.
http://
NANOAMP[NanoAmp Solutions, Inc.]
etc
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
|
| IC61LV6416 IC61LV6416-8TI IC61LV6416-10B IC61LV641 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
RES,78.7,1/8W,1%,FXD,SMT,THKF,1206
64K x 16 Hight Speed SRAM with 3.3V 64K的16 Hight高速SRAM.3V
|
ICSI[Integrated Circuit Solution Inc]
Ecliptek, Corp.
|
|
