| PART |
Description |
Maker |
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A |
7.7-8.5GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V7785A_04 MGFC42V7785A MGFC42V7785A04 |
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785A C407785A |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| S1T8536X01-T0R0 S1T8536 |
2.4GHZ-2.5GHZ SINGLE-CHIP RF TRANSCEIVER Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MD59-0044 MD59-0044RTR MD59-0044TR |
Wideband Downconverter 0.7-2.5GHz 宽带变频0.7 - 2.5GHz
|
Weitron International Co., Ltd.
MACOM[Tyco Electronics]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
