| PART |
Description |
Maker |
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M11B416256A M11B416256A-25J M11B416256A-25T M11B41 |
256 K x 16 DRAM EDO PAGE MODE
|
Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
N.A.
ETC
Electronic Theatre Controls, Inc.
|
| HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
4M x 16 Bit 8k EDO DRAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| AS4LC1M16E5-60JC AS4LC1M16E5 AS4LC1M16E5-60TC AS4L |
3V 1M x 16 CMOS DRAM (EDO)
3V 1M X 6 CMOS DRAM (EDO)
|
Alliance Semiconductor
ETC[ETC]
|
| HM62V16256BLTT-8SL HM62V16256BLTT-8 HM62V16256BLTT |
4 M SRAM (256-kword ×16-bit)(4 M 静态RAM(256k字6) 四米的SRAM56 - KWord的16位）个M静态随机存储器56k字16位）
From old datasheet system
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
|
Hitachi,Ltd.
Hitachi America
|
| AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
|
Alliance Semiconductor
|
| IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IC41C16256-25TG |
256Kx16 bit Dynamic RAM with EDO Page Mode
|
Integrated Circuit Solution Inc
|
