| PART |
Description |
Maker |
| MR53V8052J-XXMA MR53V8052J-XXRA MR53V8052J-XXTP MR |
524,288-Word x 16-bit or 1,048,576-Word x 8-bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
|
OKI[OKI electronic componets]
|
| A23L1616 A23L16161 A23L16161V A23L16162 A23L16162V |
70ns 2M x 16/4M x 8bit CMOS MASK ROM
100ns 2M x 16/4M x 8bit CMOS MASK ROM
Power Resistor; Series:MK; Resistance:20ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
2M X 16 / 4M X 8 BIT CMOS MASK ROM 200万16 / 4米8位CMOS掩膜ROM
|
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MSM27C401CZ |
524,288-Word x 8-Bit One Time PROM 524,288字8位一次性可编程
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
OKI electronic components
|
| V29C31004B V29C31004T |
4 MEGABIT 524,288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V29C51400B V29C51400T |
4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| AK632512AW AK632512AW-15 |
524,288 x 32 Bit CMOS / BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AM29F040 AM29F040-120EI AM29F040-120FC AM29F040-12 |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| FM27C512 FM27C512V FM27C512_01 FM27C512Q FM27C512Q |
524,288-Bit (64K x 8) High Performance CMOS EPROM
524288-Bit (64Kx 8) High Performance CMOS EPROM(95.70 k)
524,288-Bit (64K x 8)High Performance CMOS EPROM
|
ETC[ETC]
Fairchild Semiconductor
|
| S29C51004B12T S29C51004B12J S29C51004B12P S29C5100 |
4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY 4兆位24288 × 8位）5伏的CMOS闪存
|
Electronic Theatre Controls, Inc.
PMC-Sierra, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MR27V802D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM(512K字6位或1M字位一次性可编程ROM 524,288字16位或1048576字8位一次性可编程（为512k字16位或100万字× 8位一次性可编程ROM的字
|
Atmel, Corp.
|
